منابع مشابه
Molecular beam epitaxial growth of atomically smooth scandium nitride films
High quality scandium nitride films have been grown on magnesium oxide ~001! substrates by molecular beam epitaxy using a rf plasma source for nitrogen. Both reflection high energy electron diffraction and x-ray diffraction confirm that these films have ~001!-orientation. Atomic force microscopy reveals a surface morphology consisting of large plateaus and pyramids. The plateaus are found to be...
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Film bulk acoustic resonators (FBAR) are promising candidates to replace surface acoustic wave devices as filters or delay lines, but also offer exciting opportunities as biological or gas sensors. In this work, solidly mounted FBARs were manufactured by substituting commonly used pure aluminium nitride (AlN) by scandium doped aluminium nitride (ScAlN) thin films as the piezoelectric layer. The...
متن کاملEpitaxial growth of ferromagnetic δ-phase manganese gallium on semiconducting scandium nitride (001)
Adam J. Hauser and Fengyuan Yang Department of Physics, The Ohio State University, 191 Woodruff Avenue, Columbus, Ohio 43210, USA (Dated: August 22, 2010) Abstract Ferromagnetic δ-phase manganese gallium layers with Mn/(Mn + Ga) = 60% have been successfully grown on ScN(001) by molecular beam epitaxy, expanding possibilities for ferromagnetic layers on nitride semiconductors. The in-plane epita...
متن کاملPhonon thermal conductivity of scandium nitride for thermoelectrics from first-principles calculations and thin-film growth
Sit Kerdsongpanya,1,* Olle Hellman,1,2 Bo Sun,3 Yee Kan Koh,3 Jun Lu,1 Ngo Van Nong,4 Sergei I. Simak,1 Björn Alling,1,5 and Per Eklund1,† 1Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden 2Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, California 91125, USA 3Department of Mechanical Engine...
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ژورنال
عنوان ژورنال: Journal of Crystal Growth
سال: 2008
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2007.12.053